Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤199mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS.
·Static drain-source on-resistance:
RDS(on)≤199mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
16
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
139
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
.
IPW60R199CP - Infineon Technologies
www.DataSheet4U.com IPW60R199CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPW60R190C |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPW60R190C6 |
Infineon |
MOSFET |
|
| 3 | IPW60R190E6 |
Infineon Technologies |
E6 Power Transistor |
|
| 4 | IPW60R190E6 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPW60R190P6 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPW60R190P6 |
Infineon |
MOSFET |
|
| 7 | IPW60R120C7 |
Infineon |
MOSFET |
|
| 8 | IPW60R120C7 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPW60R120P7 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPW60R120P7 |
Infineon |
MOSFET |
|
| 11 | IPW60R125C6 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPW60R125C6 |
Infineon Technologies |
MOSFET |
|