CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrific.
• Extremely low losses due to very low FOM Rdson
*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt
650 0.19 63.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPW60R190C |
INCHANGE |
N-Channel MOSFET | |
2 | IPW60R190E6 |
Infineon Technologies |
E6 Power Transistor | |
3 | IPW60R190E6 |
INCHANGE |
N-Channel MOSFET | |
4 | IPW60R190P6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPW60R190P6 |
Infineon |
MOSFET | |
6 | IPW60R199CP |
Infineon Technologies |
CoolMOS Power Transistor | |
7 | IPW60R199CP |
INCHANGE |
N-Channel MOSFET | |
8 | IPW60R120C7 |
Infineon |
MOSFET | |
9 | IPW60R120C7 |
INCHANGE |
N-Channel MOSFET | |
10 | IPW60R120P7 |
INCHANGE |
N-Channel MOSFET | |
11 | IPW60R120P7 |
Infineon |
MOSFET | |
12 | IPW60R125C6 |
INCHANGE |
N-Channel MOSFET |