Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•ExtremelylowlossesduetoverylowFOMRdson
*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
PG-TO247
PG-TO220
tab
Gate Pin 1
Drain Pin 2
Source Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.28
Ω
ID
18.1
A
Qg,typ
32.6
nC
ID,pulse
42.
IPW50R280CE - INCHANGE
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R280CE IIPW50R280CE ·FEATURES ·Static drain-source on-resi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPW50R250CP |
Infineon |
Power Transistor |
|
| 2 | IPW50R250CP |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPW50R299CP |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPW50R299CP |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPW50R140CP |
Infineon Technologies |
Power Transistor |
|
| 6 | IPW50R140CP |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPW50R190CE |
Infineon |
MOSFET |
|
| 8 | IPW50R190CE |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPW50R199CP |
Infineon Technologies |
Power Transistor |
|
| 10 | IPW50R199CP |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPW50R350CP |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPW50R350CP |
INCHANGE |
N-Channel MOSFET |
|