CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPW50R250CP 550 V 0.250 Ω 27 nC PG-TO247 CoolMOS CP is designed .
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ
IPW50R250CP
550 V 0.250 Ω
27 nC
PG-TO247
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM Stages for ATX, Notebook adapter, PDP and LCD TV
Type IPW50R250CP
Package PG-TO247
Marking 5R250P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
S.
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW50R250CP IIPW50R250CP ·FEATURES ·Static drain-source on-resi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPW50R280CE |
Infineon |
MOSFET | |
2 | IPW50R280CE |
INCHANGE |
N-Channel MOSFET | |
3 | IPW50R299CP |
Infineon Technologies |
Power-Transistor | |
4 | IPW50R299CP |
INCHANGE |
N-Channel MOSFET | |
5 | IPW50R140CP |
Infineon Technologies |
Power Transistor | |
6 | IPW50R140CP |
INCHANGE |
N-Channel MOSFET | |
7 | IPW50R190CE |
Infineon |
MOSFET | |
8 | IPW50R190CE |
INCHANGE |
N-Channel MOSFET | |
9 | IPW50R199CP |
Infineon Technologies |
Power Transistor | |
10 | IPW50R199CP |
INCHANGE |
N-Channel MOSFET | |
11 | IPW50R350CP |
Infineon Technologies |
Power-Transistor | |
12 | IPW50R350CP |
INCHANGE |
N-Channel MOSFET |