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CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features •Highvoltage.
•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
•Qualified according to JEDEC Standard
•Pb-freeleadplating;RoHScompliant; halogenfreemoldcompound
DPAK
tab
2 1
3
IPAK
tab
1 23
Drain Pin 2
Gate Pin 1
Source Pin 3
Benefits
•Increasedpowerdensitysolutionsduetosmallerpackage
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetolowoperatingtemperatures
Applications
•LEDLightingforretrofitapplicationsinQRFlybacktopology
Table1KeyPerfor.
IPU80R1K4CE - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPU80R1K4P7 |
Infineon |
MOSFET |
|
| 2 | IPU80R1K0CE |
Infineon |
MOSFET |
|
| 3 | IPU80R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPU80R2K8CE |
Infineon |
MOSFET |
|
| 5 | IPU80R2K8CE |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPU80R4K5P7 |
Infineon |
MOSFET |
|
| 7 | IPU04N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 8 | IPU050N03L |
Infineon Technologies |
Fast switching MOSFET |
|
| 9 | IPU050N03L |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPU050N03LG |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPU05N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 12 | IPU060N03L |
INCHANGE |
N-Channel MOSFET |
|