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IPU80R1K4CE |
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| Part Number | IPU80R1K4CE |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.9 A PD Total Dissipation @TC=25℃ 63 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAM... |
| Document |
 IPU80R1K4CE Data Sheet
PDF 260.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPU80R1K4CE |
Infineon |
MOSFET |
|
| 2 | IPU80R1K4P7 |
Infineon |
MOSFET |
|
| 3 | IPU80R1K0CE |
Infineon |
MOSFET |
|
| 4 | IPU80R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPU80R2K8CE |
Infineon |
MOSFET |
|