www.DataSheet4U.com IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application P.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO252) ID 85 25 35 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Package Marking
PG-TO263-3 26CNE8N
PG-TO252-3 25CNE8N
PG-TO262-3 26CNE8N
PG-TO220-3 26CNE8N
PG-TO251-3 25CNE8N
Maximum ratings, at T j=25 °C, unless otherwise.
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