IPU06N03LAG - Infineon Technologies

IPU06N03LAG Power-Transistor

www.datasheet4u.com IPD06N03LA G IPS06N03LA G IPF06N03LA G IPU06N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead.

Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 5.7 50 V mΩ A Type IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA Package Marking P-TO252-3-11 06N03LA P-TO252-3-23 06N03LA P-TO251-3-11 06N03LA P-TO251-3-1 06N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbo.