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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•N-channel,normallevel
•Verylowon-resistanceRDS(on)
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowreverserecoverycharge(Qrr)
•Highavalancheenergyrating
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
•100%avalanchetested
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
200
V
RDS(on),max
6.7
mΩ
ID
137
A
Qoss
226
nC
QG
71
nC
Qrr
339
nC
Type/O.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPT004N03L |
Infineon |
MOSFET |
|
| 2 | IPT007N06N |
Infineon |
MOSFET |
|
| 3 | IPT008N06NM5LF |
Infineon |
60V MOSFET |
|
| 4 | IPT009N06NM5 |
Infineon |
MOSFET |
|
| 5 | IPT012N08N5 |
Infineon |
MOSFET |
|
| 6 | IPT015N10N5 |
Infineon |
MOSFET |
|
| 7 | IPT020N10N3 |
Infineon |
MOSFET |
|
| 8 | IPT020N13NM6 |
Infineon |
MOSFET |
|
| 9 | IPT026N12NM6 |
Infineon |
MOSFET |
|
| 10 | IPT039N15N5 |
Infineon |
MOSFET |
|
| 11 | IPT059N15N3 |
Infineon |
MOSFET |
|
| 12 | IPT111N20NFD |
Infineon |
MOSFET |
|