IPT026N12NM6 - Infineon

IPT026N12NM6 MOSFET

. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .

Features

• N‑channel, normal level
• Very low on‑resistance RDS(on)
• Excellent gate charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)
• High avalanche energy rating
• 175°C operating temperature
• Optimized for high frequency switching
• Pb‑free lead plating; RoHS compliant
• Halogen‑free according to IEC61249‑2‑21
• MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 2.6 mΩ ID 224 A Qoss 166 nC QG (0V...10V) 70 nC .