IPP80N06S4L-05 - Infineon

IPP80N06S4L-05 Power-Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 Product Summary V DS R DS(on),max (SMD version) ID 60 V 4.8 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220.

Features

• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 Product Summary V DS R DS(on),max (SMD version) ID 60 V 4.8 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4L-05 IPI80N06S4L-05 IPP80N06S4L-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L05 4N06L05 4N06L05 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1).