OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 7.1 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-.
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07
Product Summary V DS R DS(on),max (SMD version) ID
60 V 7.1 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0607 4N0607 4N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP80N06S4-05 |
Infineon |
Power-Transistor | |
2 | IPP80N06S4L-05 |
Infineon |
Power-Transistor | |
3 | IPP80N06S4L-07 |
Infineon |
Power-Transistor | |
4 | IPP80N06S2-05 |
Infineon Technologies |
Power-Transistor | |
5 | IPP80N06S2-07 |
Infineon Technologies |
Power-Transistor | |
6 | IPP80N06S2-08 |
Infineon Technologies |
Power-Transistor | |
7 | IPP80N06S2-09 |
Infineon Technologies |
Power-Transistor | |
8 | IPP80N06S2-H5 |
Infineon Technologies |
Power-Transistor | |
9 | IPP80N06S2L-05 |
Infineon Technologies |
Power-Transistor | |
10 | IPP80N06S2L-06 |
Infineon Technologies |
Power-Transistor | |
11 | IPP80N06S2L-07 |
Infineon Technologies |
Power-Transistor | |
12 | IPP80N06S2L-09 |
Infineon Technologies |
Power-Transistor |