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IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"#™3 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"[# Product Summary V ;I R -@ ?>2 I I; )*( K ),&/ Z" -. 7 R U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R+ F2 =:7:65 2 44@ C5:?8 .
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Maximum ratings, 2 ET W.
IPP147N12N3 - INCHANGE
isc N-Channel MOSFET Transistor IPP147N12N3，IIPP147N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤14.7mΩ .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP147N12N3G |
Infineon |
MOSFET |
|
| 2 | IPP147N03L |
Infineon |
Power-Transistor |
|
| 3 | IPP147N03LG |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPP14N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor |
|
| 5 | IPP100N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPP100N04S2L-03 |
Infineon Technologies |
Power-Transistor |
|
| 7 | IPP100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 8 | IPP100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 9 | IPP100N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPP100N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPP100N06S3-03 |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPP100N06S3L-03 |
Infineon Technologies |
Power-Transistor |
|