and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineo.
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM)
EIA/JESD22-A114-B
Product Summary V DS R DS(on),max (SMD version) ID 55 2.7 100 V mΩ A
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Ordering Code SP0000-87978 SP0000-87979 SP0000-87977
Marking 3PN06L03 3PN06L03 3PN06L03
Maximum ratings, at T j=25 °C, unless otherwise.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP100N06S3-03 |
Infineon Technologies |
Power-Transistor | |
2 | IPP100N06S2-05 |
Infineon Technologies |
Power-Transistor | |
3 | IPP100N06S2L-05 |
Infineon Technologies |
Power-Transistor | |
4 | IPP100N04S2-04 |
Infineon Technologies |
Power-Transistor | |
5 | IPP100N04S2L-03 |
Infineon Technologies |
Power-Transistor | |
6 | IPP100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor | |
7 | IPP100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
8 | IPP100N08N3 |
Infineon |
Power-Transistor | |
9 | IPP100N08N3 |
INCHANGE |
N-Channel MOSFET | |
10 | IPP100N08N3G |
Infineon |
Power-Transistor | |
11 | IPP100N08S2-07 |
Infineon Technologies |
Power-Transistor | |
12 | IPP100N08S2L-07 |
Infineon Technologies |
Power-Transistor |