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isc N-Channel MOSFET Transistor IPP120N20NFD，IIPP120N20NFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for hard commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S.
·Static drain-source on-resistance:
RDS(on) ≤12mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Optimized for hard commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
84
IDM
Drain Current-Single Pulsed
336
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL C.
IPP120N20NFD - Infineon
Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Very.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP120N04S3-02 |
Infineon |
Power-Transistor |
|
| 2 | IPP120N04S4-01 |
Infineon |
Power-Transistor |
|
| 3 | IPP120N04S4-02 |
Infineon |
Power-Transistor |
|
| 4 | IPP120N06NG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPP120N06S4-02 |
Infineon |
Power-Transistor |
|
| 6 | IPP120N06S4-03 |
Infineon |
Power-Transistor |
|
| 7 | IPP120N06S4-H1 |
Infineon |
Power-Transistor |
|
| 8 | IPP120N08S4-03 |
Infineon |
Power-Transistor |
|
| 9 | IPP120N08S4-04 |
Infineon |
Power-Transistor |
|
| 10 | IPP120N10S4-03 |
Infineon |
Power-Transistor |
|
| 11 | IPP120N10S4-05 |
Infineon |
Power-Transistor |
|
| 12 | IPP120P04P4-04 |
Infineon |
Power-Transistor |
|