OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 Product Summary V DS R DS(on) (SMD Version) ID -40 V 3.5 mW -120 A PG-TO263-3-2 PG-TO262-3-1.
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04
Product Summary V DS R DS(on) (SMD Version) ID
-40 V 3.5 mW -120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120P04P4-04 IPI120P04P4-04 IPP120P04P4-04
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4P0404 4P0404 4P0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP120P04P4L-03 |
Infineon |
Power-Transistor | |
2 | IPP120N04S3-02 |
Infineon |
Power-Transistor | |
3 | IPP120N04S4-01 |
Infineon |
Power-Transistor | |
4 | IPP120N04S4-02 |
Infineon |
Power-Transistor | |
5 | IPP120N06NG |
Infineon Technologies |
Power-Transistor | |
6 | IPP120N06S4-02 |
Infineon |
Power-Transistor | |
7 | IPP120N06S4-03 |
Infineon |
Power-Transistor | |
8 | IPP120N06S4-H1 |
Infineon |
Power-Transistor | |
9 | IPP120N08S4-03 |
Infineon |
Power-Transistor | |
10 | IPP120N08S4-04 |
Infineon |
Power-Transistor | |
11 | IPP120N10S4-03 |
Infineon |
Power-Transistor | |
12 | IPP120N10S4-05 |
Infineon |
Power-Transistor |