IPP06CN10NG - Infineon Technologies

IPP06CN10NG Power-Transistor

www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G Package Marking PG-TO263-3 06CN10N PG-TO262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions.