Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPP060N06N Product Summary VDS RDS(on),max ID QOSS QG(0V...
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPP060N06N
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 6.0 mW 45 A
32 nC 27 nC
PG-TO220-3
Type IPP060N06N
Package PG-TO220-3
Marking 060N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
45 .
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N,IIPP060N06N ·FEATURES ·Static drain-source on-resist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP062NE7N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPP062NE7N3 |
Infineon |
Power-Transistor | |
3 | IPP062NE7N3G |
Infineon |
Power-Transistor | |
4 | IPP065N03L |
Infineon |
Power-Transistor | |
5 | IPP065N03L |
INCHANGE |
N-Channel MOSFET | |
6 | IPP065N03LG |
Infineon Technologies |
Power-Transistor | |
7 | IPP065N06LG |
Infineon Technologies |
Power-Transistor | |
8 | IPP06CN10NG |
Infineon Technologies |
Power-Transistor | |
9 | IPP06CNE8NG |
Infineon Technologies |
Power-Transistor | |
10 | IPP06N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
11 | IPP011N03LF2S |
Infineon |
MOSFET | |
12 | IPP014N06NF2S |
Infineon |
MOSFET |