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Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformancePara.
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
5.2
mΩ
ID 80 A
Qoss
51
nC
QG(0V..10V)
42
nC
OptiMOSª5Power-Transistor,80V IPP052N08N5
TO-220-3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPP052N08N5
P.
IPP052N08N5 - INCHANGE
isc N-Channel MOSFET Transistor IPP052N08N5，IIPP052N08N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.2mΩ ·.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP052N06L3 |
Infineon |
Power-Transistor |
|
| 2 | IPP052N06L3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP052N06L3G |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPP052NE7N3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPP052NE7N3 |
Infineon |
Power-Transistor |
|
| 6 | IPP052NE7N3G |
Infineon Technologies |
Power-Transistor |
|
| 7 | IPP050N03LF2S |
Infineon |
MOSFET |
|
| 8 | IPP050N06N |
Infineon |
Power-Transistor |
|
| 9 | IPP050N06NG |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPP051N15N5 |
Infineon |
MOSFET |
|
| 11 | IPP051N15N5 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPP051NE8NG |
Infineon Technologies |
Power-Transistor |
|