. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• Optimized for a wide range of applications
• N‑channel, logic level
• 100% avalanche tested
• 175°C rated
• Pb‑free lead plating; RoHS compliant
• Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
4.95
mΩ
ID
53
A
Qoss
17
nC
Qg (0V..4.5V)
10
nC
Type/Ordering Code IPP050N03LF2S
Package PG‑TO220‑3
PG‑TO220‑t3ab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Marking 050N03F2
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.0 2024‑05‑2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP050N06N |
Infineon |
Power-Transistor | |
2 | IPP050N06NG |
Infineon Technologies |
Power-Transistor | |
3 | IPP051N15N5 |
Infineon |
MOSFET | |
4 | IPP051N15N5 |
INCHANGE |
N-Channel MOSFET | |
5 | IPP051NE8NG |
Infineon Technologies |
Power-Transistor | |
6 | IPP052N06L3 |
Infineon |
Power-Transistor | |
7 | IPP052N06L3 |
INCHANGE |
N-Channel MOSFET | |
8 | IPP052N06L3G |
Infineon Technologies |
Power-Transistor | |
9 | IPP052N08N5 |
Infineon |
MOSFET | |
10 | IPP052N08N5 |
INCHANGE |
N-Channel MOSFET | |
11 | IPP052NE7N3 |
INCHANGE |
N-Channel MOSFET | |
12 | IPP052NE7N3 |
Infineon |
Power-Transistor |