IPI65R190E6 - INCHANGE

IPI65R190E6 N-Channel MOSFET

·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 151 W Tj Max. Operatin.

Features

·Static drain-source on-resistance: RDS(on) ≤0.19Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRIPTION
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 151 W Tj Max. Operating Junction Temperature 150 .