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IPI65R190E6 |
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| Part Number | IPI65R190E6 |
| Manufacturer | INCHANGE |
| Description | ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 151 W Tj Max. Operating Junction Temperature 150 ... |
| Document |
 IPI65R190E6 Data Sheet
PDF 282.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPI65R190E6 |
Infineon Technologies |
Power Transistor |
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| 2 | IPI65R190C6 |
Infineon Technologies |
Power Transistor |
|
| 3 | IPI65R190C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPI65R190CFD |
Infineon Technologies |
CFD2 Power Transistor |
|
| 5 | IPI65R190CFD |
INCHANGE |
N-Channel MOSFET |
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