IPI100P03P3L-04 - Infineon

IPI100P03P3L-04 Power-Transistor

OptiMOS®-P Trench Power-Transistor IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary V DS -30 V Features • P-channel - Logic Level - Enhancement mode R DS(on),max (SMD version) 4 mΩ • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature I D -100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Green pack.

Features

• P-channel - Logic Level - Enhancement mode R DS(on),max (SMD version) 4 mΩ
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature I D -100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
• Green package (RoHS Compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
• Intended for reverse battery protection Type IPB100P03P3L-04 IPI100P03P3L-04 IPP100P03P3L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3P03L04 3P03L04 3P03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) .