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isc N-Channel MOSFET Transistor IPD65R250C6,IIPD65R250C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .
·Static drain-source on-resistance:
RDS(on)≤0.25Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
16.1
IDM
Drain Current-Single Pulsed
46
PD
Total Dissipation @TC=25℃
208
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAM.
IPD65R250C6 - Infineon
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD65R250E6 |
Infineon |
MOSFET |
|
| 2 | IPD65R250E6 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD65R225C7 |
Infineon |
MOSFET |
|
| 4 | IPD65R225C7 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD65R190C7 |
Infineon |
MOSFET |
|
| 6 | IPD65R190C7 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD65R1K0CE |
Infineon |
MOSFET |
|
| 8 | IPD65R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPD65R1K4C6 |
Infineon |
MOSFET |
|
| 10 | IPD65R1K4C6 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD65R1K4CFD |
Infineon |
MOSFET |
|
| 12 | IPD65R1K4CFD |
INCHANGE |
N-Channel MOSFET |
|