Type IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max ID 30 11.6 30 V mΩ A • Superior thermal resistance • 175 °C operating .
DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 120 64 6 ±20 52 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.5 page 1 2006-05-15 IPD12N03LB G IPU12N03LB G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB www.DataSheet4U.com IPS12N03LB G IPF12N03LB G Unit max. Values typ. R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 2.9 75 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate volt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD12N03L |
Infineon Technologies AG |
OptiMOS Buck converter series | |
2 | IPD122N10N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPD122N10N3 |
Infineon |
Power-Transistor | |
4 | IPD122N10N3G |
Infineon |
Power-Transistor | |
5 | IPD127N06L |
INCHANGE |
N-Channel MOSFET | |
6 | IPD127N06L |
Infineon |
Power-Transistor | |
7 | IPD127N06LG |
Infineon Technologies |
Power-Transistor | |
8 | IPD12CN10N |
Infineon |
Power-Transistor | |
9 | IPD12CN10NG |
Infineon |
Power-Transistor | |
10 | IPD12CNE8NG |
Infineon Technologies |
Power-Transistor | |
11 | IPD100N04S4-02 |
Infineon |
Power-Transistor | |
12 | IPD100N06S4-03 |
Infineon |
Power-Transistor |