IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switchi.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD122N10N3 G
100 V 12.2 mW 59 A
Package Marking
PG-TO252-3 122N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=1.
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD122N10N3G |
Infineon |
Power-Transistor | |
2 | IPD127N06L |
INCHANGE |
N-Channel MOSFET | |
3 | IPD127N06L |
Infineon |
Power-Transistor | |
4 | IPD127N06LG |
Infineon Technologies |
Power-Transistor | |
5 | IPD12CN10N |
Infineon |
Power-Transistor | |
6 | IPD12CN10NG |
Infineon |
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7 | IPD12CNE8NG |
Infineon Technologies |
Power-Transistor | |
8 | IPD12N03L |
Infineon Technologies AG |
OptiMOS Buck converter series | |
9 | IPD12N03LBG |
Infineon Technologies |
Power-Transistor | |
10 | IPD100N04S4-02 |
Infineon |
Power-Transistor | |
11 | IPD100N06S4-03 |
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12 | IPD105N03LG |
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Power Transistor |