Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket OptiMOSTM3Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),m.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen free according to IEC61249-2-21
*
• Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G IPD110N12N3 G
IPD110N12N3 G IPS110N12N3 G
120 V 11 mΩ 75 A
Package
PG-TO251-3
PG-TO252-3
Marking
110N12N
110N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Sy.
IPD110N12N3 - INCHANGE
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·En.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD110N12N3G |
Infineon |
MOSFET |
|
| 2 | IPD100N04S4-02 |
Infineon |
Power-Transistor |
|
| 3 | IPD100N06S4-03 |
Infineon |
Power-Transistor |
|
| 4 | IPD105N03LG |
Infineon |
Power Transistor |
|
| 5 | IPD10N03LA |
Infineon Technologies |
OptiMOS2 Power-Transistor |
|
| 6 | IPD122N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD122N10N3 |
Infineon |
Power-Transistor |
|
| 8 | IPD122N10N3G |
Infineon |
Power-Transistor |
|
| 9 | IPD127N06L |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPD127N06L |
Infineon |
Power-Transistor |
|
| 11 | IPD127N06LG |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPD12CN10N |
Infineon |
Power-Transistor |
|