IPD06N03LZG - Infineon

IPD06N03LZG Power-Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPD06N03LZ G IPS06N03LZ G IPU06N03LZ G Product .

Features

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant IPD06N03LZ G IPS06N03LZ G IPU06N03LZ G Product Summary V DS R DS(on),max (SMD Version) ID 25 V 5.0 mΩ 50 A Type IPD06N03LZ IPS06N03LZ IPU06N03LZ Package Marking P-TO252-3-11 06N03LZ P-TO251-3-11 06N03LZ P-TO251-3-21 06N03LZ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions .