IPD068P03L3G - Infineon Technologies

IPD068P03L3G Power-Transistor

OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management • Halogen-free according to IEC61249-2-21 IPD068P03L3 G Product Summary VDS RDS(on),max IDD VGS = 10V VGS = .

Features

• single P-Channel in DPAK
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• 100% Avalanche tested
• Pb-free; RoHS compliant, halogen free
• applications: power management
• Halogen-free according to IEC61249-2-21 IPD068P03L3 G Product Summary VDS RDS(on),max IDD VGS = 10V VGS = 4.5V -30 V 6.8 mW 11.0 -70 A PG-TO252-3 Type IPD068P03L3 G Package Marking PG-TO252-3 068P03L Lead free Yes Packing non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche e.