IPD036N04L - Infineon

IPD036N04L Power-Transistor

Type OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant Type IPD036N04L .

Features

• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant Type IPD036N04L G
• Pb-free plating; RoHS compliant Product Summary V DS R DS(on),max ID IPD036N04L G 40 V 3.6 mΩ 90 A Package Marking PG-TO252-3 036N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) A.