Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedforsynchronousrectification
•100%avalanchetested
•Superiorthermalresistance
•N-channel,normallevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
3.3
mΩ
ID
90
A
QOSS
44
nC
QG(0V..10V)
38
nC
D-PAK
tab
1
2
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD033N06N
Package PG-TO252-3
Marking 033N06N
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
.
IPD033N06N - INCHANGE
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·En.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD031N03L |
Infineon |
Power-Transistor |
|
| 2 | IPD031N03L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD031N03LG |
Infineon |
Power-Transistor |
|
| 4 | IPD031N06L3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD031N06L3 |
Infineon |
Power-Transistor |
|
| 6 | IPD031N06L3G |
Infineon |
Power-Transistor |
|
| 7 | IPD034N06N3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD034N06N3 |
Infineon |
Power-Transistor |
|
| 9 | IPD034N06N3G |
Infineon |
Power-Transistor |
|
| 10 | IPD036N04L |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD036N04L |
Infineon |
Power-Transistor |
|
| 12 | IPD036N04LG |
Infineon |
Power-Transistor |
|