IPB80N08S2L-07 - Infineon Technologies

IPB80N08S2L-07 Power-Transistor

OptiMOS™ Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N08S2L-07 IPP80N08S2L-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 6.8 mW 80 A PG-TO263-3-2 P.

Features

• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested IPB80N08S2L-07 IPP80N08S2L-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 6.8 mW 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N08S2L-07 IPP80N08S2L-07 Package Ordering Code Marking PG-TO263-3-2 SP0002-19051 2N08L07 PG-TO220-3-1 SP0002-19050 2N08L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T .