IPB80N04S3-03 - Infineon Technologies

IPB80N04S3-03 Power-Transistor

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.2 mΩ 80 A PG-TO26.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0403 3N0403 3N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) .