and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
Unit A 700 mJ 25 6 kV/µs ±20 V 250 W -55... +175 55/175/56 °C 2006-02-14 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 0.6 K/W - - 62.5 - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage V(BR)DSS 100 VGS=0V, ID=2m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB70N10S3-12 |
Infineon Technologies |
Power-Transistor | |
2 | IPB70N10S3L-12 |
Infineon Technologies |
Power-Transistor | |
3 | IPB70N12S3-11 |
Infineon |
Power Transistor | |
4 | IPB70N04S3-07 |
Infineon Technologies |
Power-Transistor | |
5 | IPB70N04S4-06 |
Infineon Technologies |
Power-Transistor | |
6 | IPB70P04P4-09 |
Infineon Technologies |
Power-Transistor | |
7 | IPB77N06S2-12 |
Infineon Technologies |
Power-Transistor | |
8 | IPB77N06S3-09 |
Infineon Technologies |
Power-Transistor | |
9 | IPB79CN10N |
Infineon |
Power Transistor | |
10 | IPB79CN10NG |
Infineon |
Power-Transistor | |
11 | IPB79CN10NG |
INCHANGE |
N-Channel MOSFET | |
12 | IPB009N03L |
Infineon |
MOSFET |