IPB70N10S3-12 - Infineon Technologies

IPB70N10S3-12 Power-Transistor

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.3 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.3 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N1012 3N1012 3N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=.