IPB60R600CP - Infineon Technologies

IPB60R600CP Power Transistor

IPB60R600CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V Ω nC PG-TO263 CoolMOS CP .

Features

• Lowest figure-of-merit R ON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V Ω nC PG-TO263 CoolMOS CP is designed for:
• Hard switching SMPS topologies Type IPB60R600CP Package PG-TO263 Marking 6R600P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pul.