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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)
*A(below1Ohm
*mm²)
•Fullyqualifiedacc.JEDECforIndustrialApplications
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction losses
•Increasedpowerdensitysolutionsena.
IPB60R080P7 - INCHANGE
Isc N-Channel MOSFET Transistor IPB60R080P7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB60R040C7 |
Infineon |
MOSFET |
|
| 2 | IPB60R040C7 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB60R060C7 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPB60R060C7 |
Infineon |
MOSFET |
|
| 5 | IPB60R060P7 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPB60R060P7 |
Infineon |
MOSFET |
|
| 7 | IPB60R099C6 |
Infineon Technologies |
MOSFET |
|
| 8 | IPB60R099C6 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPB60R099C7 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPB60R099C7 |
Infineon |
MOSFET |
|
| 11 | IPB60R099CP |
Infineon Technologies |
Power Transistor |
|
| 12 | IPB60R099CP |
INCHANGE |
N-Channel MOSFET |
|