IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ha.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
200 V 32 mΩ 34 A
Type
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
Package Marking
PG-TO263-3 320N20N
PG-TO220-3 320N20N
PG-TO262-3 320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
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Isc N-Channel MOSFET Transistor IPB320N20N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB320N20N3 |
Infineon |
Power-Transistor | |
2 | IPB34CN10N |
INCHANGE |
N-Channel MOSFET | |
3 | IPB34CN10N |
Infineon |
Power-Transistor | |
4 | IPB34CN10NG |
Infineon |
Power-Transistor | |
5 | IPB35CN10NG |
Infineon |
Power-Transistor | |
6 | IPB35N10S3L-26 |
Infineon |
MOSFET | |
7 | IPB009N03L |
Infineon |
MOSFET | |
8 | IPB009N03LG |
Infineon Technologies |
MOSFET | |
9 | IPB010N06N |
Infineon |
MOSFET | |
10 | IPB011N04L |
Infineon |
Power Transistor | |
11 | IPB011N04LG |
Infineon Technologies |
Power Transistor | |
12 | IPB011N04NF2S |
Infineon |
MOSFET |