IPB070N06LG - Infineon Technologies

IPB070N06LG Power-Transistor

www.DataSheet4U.com IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A Type IPB070N06L G IPP070N.

Features

• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A Type IPB070N06L G IPP070N06L G Type IPB070N06L G Package IPP070N06L G Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L 070N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy.