OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Hal.
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G
Product Summary V DS R DS(on),max ID
80 V 3.5 mΩ 100 A
Type
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Package Marking
PG-TO220-3 037N08N
PG-TO262-3 037N08N
PG-TO263-3 035N08N
Maximum rat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB035N08N3G |
Infineon Technologies |
Power-Transistor | |
2 | IPB035N08N3G |
INCHANGE |
N-Channel MOSFET | |
3 | IPB035N12NM6 |
Infineon |
MOSFET | |
4 | IPB031N08N5 |
INCHANGE |
N-Channel MOSFET | |
5 | IPB031N08N5 |
Infineon |
MOSFET | |
6 | IPB031NE7N3 |
INCHANGE |
N-Channel MOSFET | |
7 | IPB031NE7N3 |
Infineon |
Power Transistor | |
8 | IPB031NE7N3G |
Infineon Technologies AG |
Power-Transistor | |
9 | IPB033N10N5LF |
INCHANGE |
N-Channel MOSFET | |
10 | IPB034N03L |
Infineon |
Power-Transistor | |
11 | IPB034N03L |
INCHANGE |
N-Channel MOSFET | |
12 | IPB034N03LG |
Infineon Technologies AG |
OptiMOS3 Power-Transistor |