Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA60R280P7 ·ABSOLU.
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
IPA60R280P7
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
12 8
36
PD
Total Dissipation @TC=25℃
24
Tj
Max. Operating Junction.
IPA60R280P7 MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnology.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA60R280P6 |
Infineon |
MOSFET | |
2 | IPA60R280P6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA60R280C6 |
Infineon Technologies |
MOSFET | |
4 | IPA60R280C6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA60R280CFD7 |
Infineon |
Power-Transistor | |
6 | IPA60R280CFD7 |
INCHANGE |
N-Channel MOSFET | |
7 | IPA60R280E6 |
Infineon Technologies |
Power Transistor | |
8 | IPA60R280E6 |
INCHANGE |
N-Channel MOSFET | |
9 | IPA60R230P6 |
Infineon |
MOSFET | |
10 | IPA60R230P6 |
INCHANGE |
N-Channel MOSFET | |
11 | IPA60R250CP |
Infineon Technologies |
Power Transistor | |
12 | IPA60R250CP |
INCHANGE |
N-Channel MOSFET |