CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q .
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Product Summary
V DS @ Tj,max
R DS(on),max@T j= 25°C
Q g,typ
6.6
IPA60R250CP
650 V 0.250 Ω
26 nC
PG-TO220 FP
Type IPA60R250CP
Package PG-TO220FP
Marking 66RR225909PP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Aval.
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA60R230P6 |
Infineon |
MOSFET | |
2 | IPA60R230P6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA60R280C6 |
Infineon Technologies |
MOSFET | |
4 | IPA60R280C6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA60R280CFD7 |
Infineon |
Power-Transistor | |
6 | IPA60R280CFD7 |
INCHANGE |
N-Channel MOSFET | |
7 | IPA60R280E6 |
Infineon Technologies |
Power Transistor | |
8 | IPA60R280E6 |
INCHANGE |
N-Channel MOSFET | |
9 | IPA60R280P6 |
Infineon |
MOSFET | |
10 | IPA60R280P6 |
INCHANGE |
N-Channel MOSFET | |
11 | IPA60R280P7 |
Infineon |
Power-Transistor | |
12 | IPA60R280P7 |
INCHANGE |
N-Channel MOSFET |