IPA60R190P6 - INCHANGE

IPA60R190P6 N-Channel MOSFET

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Features

·Drain Source Voltage- : VDSS=500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 20.2 12.7 A IDM Drain Current-Single Pulsed 57 A PD Total Dissipation @TC=25℃ 151 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Sto.