IPA60R120P7 - INCHANGE

IPA60R120P7 N-Channel MOSFET

isc N-Channel MOSFET Transistor IPA60R120P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .

Features

· Drain-source on-resistance: RDS(on) ≤ 0.12Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·High switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 26 IDM Drain Current-Single Pulsed 78 PD Total Dissipation @TC=25℃ 28 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SY.