IPA60R120P7 |
Part Number | IPA60R120P7 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IPA60R120P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for ... |
Features |
· Drain-source on-resistance: RDS(on) ≤ 0.12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 26 IDM Drain Current-Single Pulsed 78 PD Total Dissipation @TC=25℃ 28 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SY... |
Document |
IPA60R120P7 Data Sheet
PDF 235.16KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA60R120P7 |
Infineon |
MOSFET | |
2 | IPA60R120C7 |
Infineon |
MOSFET | |
3 | IPA60R120C7 |
INCHANGE |
N-Channel MOSFET | |
4 | IPA60R125C6 |
Infineon Technologies |
MOSFET | |
5 | IPA60R125C6 |
INCHANGE |
N-Channel MOSFET |