CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features .
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)
*EossandRDS(on)
*Qg
•BestinclassRDS(on)/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA60R099C6 |
Infineon Technologies |
MOSFET | |
2 | IPA60R099C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA60R099P6 |
Infineon Technologies |
MOSFET | |
4 | IPA60R099P6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA60R099P7 |
Infineon |
Power-Transistor | |
6 | IPA60R060C7 |
Infineon |
MOSFET | |
7 | IPA60R060P7 |
Infineon |
Power-Transistor | |
8 | IPA60R060P7 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | IPA60R080P7 |
Infineon |
MOSFET | |
10 | IPA60R120C7 |
Infineon |
MOSFET | |
11 | IPA60R120C7 |
INCHANGE |
N-Channel MOSFET | |
12 | IPA60R120P7 |
Infineon |
MOSFET |