IPA50R399CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC0) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.399 17 V Ω nC TO-220 Full PAK CoolMOS CP is d.
• Lowest figure-of-merit R ON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC0) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.399 17 V Ω nC
TO-220 Full PAK
CoolMOS CP is designed for:
• Hard and softswitching SMPS topologies
• DCM PFC for Lamp Ballast
• PWM-Stages Lamp Ballast, LCD and PDP TV Type IPA50R399CP Package PG-TO220FP Marking 5R399P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) Symbol Conditions .
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA50R350CP |
Infineon Technologies |
Power-Transistor | |
2 | IPA50R350CP |
INCHANGE |
N-Channel MOSFET | |
3 | IPA50R380CE |
Infineon |
MOSFET | |
4 | IPA50R380CE |
INCHANGE |
N-Channel MOSFET | |
5 | IPA50R140CP |
INCHANGE |
N-Channel MOSFET | |
6 | IPA50R140CP |
Infineon |
Power Transistor | |
7 | IPA50R190CE |
Infineon |
MOSFET | |
8 | IPA50R190CE |
INCHANGE |
N-Channel MOSFET | |
9 | IPA50R199CP |
Infineon Technologies |
Power-Transistor | |
10 | IPA50R199CP |
INCHANGE |
N-Channel MOSFET | |
11 | IPA50R250CP |
Infineon |
Power Transistor | |
12 | IPA50R250CP |
INCHANGE |
N-Channel MOSFET |