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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA50R350CP ·ABSOLU.
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
IPA50R350CP
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
10 6
22
PD
Total Dissipation @TC=25℃
32
Tj
Max. Operating Junction.
IPA50R350CP - Infineon Technologies
IPA50R350CP CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/.
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|---|---|---|---|---|
| 1 | IPA50R380CE |
Infineon |
MOSFET |
|
| 2 | IPA50R380CE |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPA50R399CP |
Infineon Technologies |
Power-Transistor |
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| 4 | IPA50R399CP |
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N-Channel MOSFET |
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| 5 | IPA50R140CP |
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N-Channel MOSFET |
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| 6 | IPA50R140CP |
Infineon |
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| 7 | IPA50R190CE |
Infineon |
MOSFET |
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| 8 | IPA50R190CE |
INCHANGE |
N-Channel MOSFET |
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| 9 | IPA50R199CP |
Infineon Technologies |
Power-Transistor |
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| 10 | IPA50R199CP |
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N-Channel MOSFET |
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| 11 | IPA50R250CP |
Infineon |
Power Transistor |
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| 12 | IPA50R250CP |
INCHANGE |
N-Channel MOSFET |
|