PRELIMINARY
Notice:This is not a final specification Some parametric are subject to change.
FEATURE
Low voltage VCE(sat) = -0.4V(MAX),Ic=-500mA
APPLICATION
Small type machine low frequency voltage amplify application, Switching
OUTLINE DRAWING
6.60 5.34
to E saturation voltage
TEST CONDITIONS
I C=-50μA I C=-1mA I E=-50μA VCB=-60V VEB=-5V VCE=-2V,I C=-200mA I C=-500mA,I B=-50mA
RATING -80 -80 -5 -1 1 10 +150
-55~+150
UNIT V V V A W W ℃ ℃
LIMITS MIN TYP MAX
-80 -
-
-80 -
-
-5 -
-
- - -1.0
- - -1.0
80 - 420
- - -0.4
UNIT
V V V μA μA V
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | INA5003AH1 |
Isahaya Electronics |
TRANSISTOR | |
2 | INA54063 |
Hewlett-Packard |
3.0 GHz Low Noise Silicon MMIC Amplifier | |
3 | INA597 |
Texas Instruments |
Wide-Bandwidth Difference Amplifier | |
4 | INA-01100 |
HP |
Silicon Bipolar MMIC Amplifier | |
5 | INA-01170 |
HP |
Silicon Bipolar MMIC Amplifier | |
6 | INA-02100 |
HP |
Silicon Bipolar MMIC Amplifier | |
7 | INA-02170 |
HP |
Silicon Bipolar MMIC Amplifier | |
8 | INA-02184 |
HP |
Silicon Bipolar MMIC Amplifier | |
9 | INA-02186 |
HP |
Silicon Bipolar MMIC Amplifier | |
10 | INA-03100 |
HP |
Silicon Bipolar MMIC Amplifier | |
11 | INA-03170 |
HP |
Silicon Bipolar MMIC Amplifier | |
12 | INA-03184 |
HP |
Silicon Bipolar MMIC Amplifier |