INA5003AH1 - Isahaya Electronics

INA5003AH1 TRANSISTOR

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FEATURE Linearity of hFE is good Low voltage VCE(sat) = -240mV(MAX),Ic=-2A Complementary INC5003AH1 INA5003AH1 SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING 6.60 5.34 UNIT：ｍｍ 2.30 0.50 0.83 2.74 6.10 2.16 10.00 1.52 APPLICATION Motor drive, IGBT drive,.

Features

wn voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain VCE(sat) C to E saturation voltage VBE(sat) fT Cob ton tstg tf B to E saturation voltage Gain band width product Collector output capacitance Turn on time Storage time Fall time IC=-100μA IC=-10mA IE=-100μA VCB=-80V VEB=-6V VCE=-1V, Ic=-2A VCE=-1V, Ic=-5A IC=-2A, IB=-200mA IC=-5A, IB=-500mA IC=-5A, IB=-500mA VCE=-10V, IE=100mA VCB=-10V, IE=0A, f=1MHz Ic=-3A, IB=-IB=0.15A Vcc=-30V, RL=10ohm VBB=7.5V RATING -100 -60 -6 -5 -10 1 10 ＋150 -55～＋150 UNIT V V V A A W W ℃ ℃ MIN -100 -60 -.